Manufacturer Part Number
SI7806ADN-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
N-channel enhancement-mode power MOSFET
Part of the TrenchFET series
Product Features and Performance
Surface mount package (PowerPAK 1212-8)
Drain-to-source voltage (Vdss) of 30V
Maximum gate-to-source voltage (Vgs) of ±20V
On-resistance (Rds(on)) of 11mΩ at 14A, 10V
Continuous drain current (Id) of 9A at 25°C
Maximum power dissipation of 1.5W at 25°C
Gate charge (Qg) of 20nC at 5V
Operating temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for improved efficiency
Compact surface-mount package
Suitable for high-current, high-frequency switching applications
Key Technical Parameters
MOSFET technology: Trench
FET type: N-channel enhancement-mode
Threshold voltage (Vgs(th)): 3V at 250A
Drive voltage range: 4.5V to 10V
Quality and Safety Features
RoHS3 compliant
Manufactured in a quality-controlled environment
Compatibility
Suitable for a wide range of power supply, motor control, and switching applications
Application Areas
Power supplies
Motor drives
Switching regulators
Lighting control
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade parts may be available in the future
Several Key Reasons to Choose This Product
Excellent performance and efficiency due to low on-resistance
Compact surface-mount package for space-constrained designs
Wide operating temperature range for versatile applications
RoHS3 compliance for use in environmentally-friendly products