SI7758DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7758DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

N-channel MOSFET transistor

Part of the SkyFET and TrenchFET series

Product Features and Performance

Drain-to-Source Voltage (Vdss) of 30V

Maximum Gate-to-Source Voltage (Vgs) of ±20V

Low On-Resistance (Rds(on)) of 2.9mΩ @ 20A, 10V

Continuous Drain Current (Id) of 60A @ 25°C

High Input Capacitance (Ciss) of 7150pF @ 15V

Power Dissipation (Max) of 6.25W (Ta) and 104W (Tc)

Operating Temperature Range of -55°C to 150°C (TJ)

Product Advantages

Efficient power handling and low power losses

Suitable for high-current, high-power applications

Trench MOSFET technology for improved performance

Key Technical Parameters

N-Channel MOSFET

Vdss: 30V

Vgs (Max): ±20V

Rds(on) (Max): 2.9mΩ @ 20A, 10V

Id (Continuous): 60A @ 25°C

Ciss (Max): 7150pF @ 15V

Power Dissipation (Max): 6.25W (Ta), 104W (Tc)

Quality and Safety Features

ROHS3 Compliant

Suitable for Surface Mount Technology (SMT) assembly

Compatibility

Compatible with various high-power, high-current applications

Application Areas

Suitable for use in power supplies, motor drives, and other high-power, high-current circuits

Product Lifecycle

Currently available, no information on discontinuation or replacements

Several Key Reasons to Choose This Product

Efficient power handling and low power losses

Suitable for high-current, high-power applications

Trench MOSFET technology for improved performance

Wide operating temperature range of -55°C to 150°C

High current capability of up to 60A

Low on-resistance for improved efficiency