SI7720DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7720DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel MOSFET transistor

Product Features and Performance

Robust TrenchFET technology

Low on-resistance of 12.5 mΩ

High continuous drain current of 12 A at 25°C

Wide operating temperature range of -50°C to 150°C

Low input capacitance of 1790 pF

High power dissipation of 3.8 W at ambient and 52 W at case temperature

Product Advantages

Excellent performance-to-cost ratio

Compact PowerPAK 1212-8 surface-mount package

Suitable for a wide range of power management and control applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30 V

Gate-to-Source Voltage (Vgs): ±20 V

Threshold Voltage (Vgs(th)): 2.5 V

Gate Charge (Qg): 45 nC

Quality and Safety Features

RoHS3 compliant

Reliable and robust TrenchFET technology

Compatibility

Suitable for power management and control applications in various industries

Application Areas

Power supplies

Motor drives

Switching regulators

Amplifiers

Industrial and consumer electronics

Product Lifecycle

The SI7720DN-T1-GE3 is an active and widely available product. No discontinuation or replacement is currently planned.

Several Key Reasons to Choose This Product

Excellent performance-to-cost ratio

Robust TrenchFET technology for reliable operation

Wide operating temperature range for versatile applications

Compact and efficient surface-mount package

Suitable for a wide range of power management and control applications