SI7478DP-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7478DP-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

This is a discrete semiconductor product, specifically a single MOSFET transistor.

Product Features and Performance

N-channel MOSFET with trench technology

60V drain-source voltage rating

15A continuous drain current at 25°C

5mΩ maximum on-resistance at 20A, 10V

160nC maximum gate charge at 10V

Wide operating temperature range of -55°C to 150°C

Product Advantages

High efficiency due to low on-resistance

Compact PowerPAK SO-8 surface mount package

Suitable for high-current switching applications

Key Technical Parameters

Drain-source voltage (Vdss): 60V

Gate-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 7.5mΩ @ 20A, 10V

Drain current (Id): 15A @ 25°C

Power dissipation (Pd): 1.9W @ 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

This MOSFET is compatible with various high-current switching and power management applications.

Application Areas

Switch-mode power supplies

Motor drives

Voltage regulators

Battery management systems

Product Lifecycle

The SI7478DP-T1-E3 is an active product, and Vishay / Siliconix continues to manufacture and support it. Replacement or upgrade options may be available.

Key Reasons to Choose This Product

Excellent efficiency and low power losses due to the low on-resistance

Compact and reliable PowerPAK SO-8 package

Wide operating temperature range for demanding applications

Suitable for high-current, high-power switching and power management designs