Manufacturer Part Number
SI7370DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-Channel MOSFET with low on-resistance and fast switching speed.
Product Features and Performance
Low on-resistance for high efficiency
Fast switching speed for high-frequency applications
High drain current capability
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent thermal and electrical performance
Compact PowerPAK SO-8 package
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 11mΩ @ 12A, 10V
Continuous Drain Current (Id): 9.6A @ 25°C
Power Dissipation (Pd): 1.9W @ 25°C
Gate Charge (Qg): 57nC @ 10V
Quality and Safety Features
RoHS3 compliant
MOSFET technology with trench structure for high reliability
Compatibility
Suitable for various high-frequency, high-power applications
Application Areas
Switching power supplies
DC-DC converters
Motor drivers
Industrial and automotive electronics
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Fast switching and high-frequency capability
Compact and reliable PowerPAK SO-8 package
Wide operating temperature range
Suitable for a variety of high-power applications
SI7368DP-T1Electro-Films (EFI) / Vishay