SI7220DN-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7220DN-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

The SI7220DN-T1-E3 is a dual N-channel enhancement-mode power MOSFET in a PowerPAK 1212-8 Dual package, designed for low-power, high-efficiency applications.

Product Features and Performance

Trench MOSFET technology

Logic-level gate

Low on-resistance of 60mΩ @ 4.8A, 10V

Continuous drain current of 3.4A @ 25°C

Wide operating temperature range of -55°C to 150°C

Low gate charge of 20nC @ 10V

Product Advantages

Compact and space-saving design in PowerPAK 1212-8 Dual package

Excellent thermal performance and power handling capability

Suitable for low-power, high-efficiency applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

On-Resistance (Rds(on)): 60mΩ @ 4.8A, 10V

Gate Threshold Voltage (Vgs(th)): 3V @ 250μA

Gate Charge (Qg): 20nC @ 10V

Power Dissipation (Pd): 1.3W

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified

Compatibility

Can be used as a replacement or alternative to similar N-channel power MOSFET products

Application Areas

Suitable for low-power, high-efficiency applications such as:

- DC-DC converters

- Motor drives

- LED drivers

- Battery management systems

- Power supplies

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent thermal performance and power handling capability

Compact and space-saving design in PowerPAK 1212-8 Dual package

Suitable for low-power, high-efficiency applications

Good reliability and quality due to RoHS3 compliance and AEC-Q101 qualification

Potential for future replacements and upgrades