Manufacturer Part Number
SI7155DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Vishay / Siliconix SI7155DP-T1-GE3 is a single P-channel TrenchFET Gen III MOSFET.
Product Features and Performance
40V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
6mΩ On-Resistance (Rds(on)) at 20A, 10V
31A Continuous Drain Current (Id) at 25°C (Ta), 100A at 25°C (Tc)
12900pF Input Capacitance (Ciss) at 20V
25W Power Dissipation at 25°C (Ta), 104W at 25°C (Tc)
-55°C to +150°C Operating Temperature Range
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Small size and surface mount package
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
3V Gate Threshold Voltage (Vgs(th)) at 250A
330nC Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 Compliant
PowerPAK SO-8 Packaging
Compatibility
Surface mount package
Application Areas
Power conversion and control
Automotive
Industrial
Consumer electronics
Product Lifecycle
In production. No indications of discontinuation.
Key Reasons to Choose
Excellent performance with low on-resistance
High current handling capability
Small and compact surface mount package
Wide operating temperature range
RoHS compliance for environmental safety