Manufacturer Part Number
SI7113DN-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Product Features and Performance
RoHS3 compliant
PowerPAK 1212-8 package
TrenchFET series
Tape & Reel (TR) packaging
Operating temperature range: -50°C to 150°C (TJ)
Drain to source voltage (Vdss): 100V
Maximum gate-to-source voltage (Vgs): ±20V
Maximum on-resistance (Rds(on)): 134mOhm @ 4A, 10V
MOSFET (Metal Oxide) technology
Continuous drain current (Id) @ 25°C: 13.2A (Tc)
Maximum input capacitance (Ciss): 1480 pF @ 50V
Maximum power dissipation: 3.7W (Ta), 52W (Tc)
P-Channel FET type
Maximum threshold voltage (Vgs(th)): 3V @ 250A
Drive voltage range: 4.5V (max Rds(on)), 10V (min Rds(on))
Maximum gate charge (Qg): 55 nC @ 10V
Surface mount mounting type
Product Advantages
High power handling capacity
Low on-resistance
Wide operating temperature range
Compact PowerPAK package
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 134mOhm @ 4A, 10V
Continuous Drain Current (Id): 13.2A (Tc)
Input Capacitance (Ciss): 1480 pF @ 50V
Power Dissipation: 3.7W (Ta), 52W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-power, high-temperature applications
Compatibility
Compatible with a wide range of electronic devices and circuits that require high-performance power transistors
Application Areas
Power supplies
Motor drives
Switching circuits
Amplifiers
Industrial and automotive electronics
Product Lifecycle
Current product, no discontinuation or obsolescence issues
Replacements and upgrades available as needed
Key Reasons to Choose This Product
High power handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
Compact and space-saving PowerPAK package
RoHS3 compliance for environmental responsibility
Proven reliability and performance in Vishay/Siliconix products
SI7112DN-T1-E3 MOSElectro-Films (EFI) / Vishay