SI6963BDQ-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI6963BDQ-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Dual P-channel MOSFET array in an 8-TSSOP package

Product Features and Performance

Operates at temperatures from -55°C to 150°C

Maximum power rating of 830mW

Dual P-channel MOSFET configuration

Drain-to-source voltage (Vdss) of 20V

On-resistance (Rds(on)) of 45mΩ @ 3.9A, 4.5V

Continuous drain current (Id) of 3.4A at 25°C

Logic-level gate (Vgs(th) max of 1.4V @ 250µA)

Gate charge (Qg) of 11nC @ 4.5V

Product Advantages

Compact 8-TSSOP package

Suitable for high-power applications

Low on-resistance for efficient performance

Logic-level gate for easy control

Key Technical Parameters

Manufacturer Part Number: SI6963BDQ-T1-E3

Drain-to-Source Voltage (Vdss): 20V

On-Resistance (Rds(on)): 45mΩ @ 3.9A, 4.5V

Continuous Drain Current (Id): 3.4A @ 25°C

Gate Threshold Voltage (Vgs(th)): 1.4V @ 250µA

Gate Charge (Qg): 11nC @ 4.5V

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature environments

Compatibility

Surface mount package (8-TSSOP)

Tape and reel packaging

Application Areas

High-power switching circuits

Power management systems

Automotive and industrial electronics

Product Lifecycle

Currently in production

Replacement or upgrade options available

Key Reasons to Choose This Product

Compact and efficient dual P-channel MOSFET design

Able to operate in high-temperature environments

Low on-resistance for improved performance and efficiency

Logic-level gate for easy control and integration

Reliable and RoHS3 compliant for various applications