SI6926ADQ-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI6926ADQ-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Dual N-Channel MOSFET Array in 8-TSSOP Package

Product Features and Performance

Dual N-Channel MOSFET array

20V Drain-to-Source Voltage

30mΩ Maximum On-Resistance

1A Continuous Drain Current

Logic Level Gate

Low Gate Charge: 10.5nC @ 4.5V

Wide Operating Temperature: -55°C to 150°C

Product Advantages

Compact 8-TSSOP package

Excellent thermal performance

Suitable for high-density, high-efficiency power conversion applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

On-Resistance (Rds(on)): 30mΩ @ 4.5A, 4.5V

Continuous Drain Current (Id): 4.1A

Gate Threshold Voltage (Vgs(th)): 1V @ 250µA

Gate Charge (Qg): 10.5nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified

Compatibility

Suitable for surface mount applications

Application Areas

Power management

Switching circuits

Motor control

Industrial and consumer electronics

Product Lifecycle

Currently in production

No known discontinuation or replacement plans

Several Key Reasons to Choose This Product

Compact 8-TSSOP package for high-density designs

Excellent thermal performance for efficient power conversion

Low on-resistance and gate charge for high-efficiency operation

Wide operating temperature range for diverse applications

RoHS3 compliance and AEC-Q101 qualification for quality and reliability