SI6562CDQ-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI6562CDQ-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI6562CDQ-T1-GE3 is a discrete semiconductor product, specifically a transistor array featuring N and P-channel MOSFETs.

Product Features and Performance

Trench MOSFET technology

Logic level gate

Continuous drain current of 6.7A and 6.1A

Low on-resistance of 22mΩ

Wide operating temperature range of -55°C to 150°C

Input capacitance of 850pF

Gate charge of 23nC

Product Advantages

Efficient power management

High current handling capability

Low conduction losses

Suitable for a wide range of operating conditions

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 22mΩ @ 5.7A, 4.5V

Current Continuous Drain (Id) @ 25°C: 6.7A, 6.1A

Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V

Vgs(th) (Max) @ Id: 1.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

The SI6562CDQ-T1-GE3 can be used in a wide range of electronic devices and systems.

Application Areas

Power management circuits

Motor control applications

Industrial and consumer electronics

Product Lifecycle

The SI6562CDQ-T1-GE3 is an active product and is not near discontinuation.

Replacement or upgrade options may be available from Vishay / Siliconix.

Key Reasons to Choose This Product

Efficient power management through low on-resistance and high current handling

Wide operating temperature range suitable for various environmental conditions

Compact surface mount package for space-constrained applications

Proven Trench MOSFET technology for reliable performance

RoHS compliance for environmental sustainability