Manufacturer Part Number
SI5902BDC-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Dual n-channel MOSFET
Product Features and Performance
30V drain-source voltage
65mΩ maximum on-resistance at 3.1A, 10V
4A continuous drain current at 25°C
220pF maximum input capacitance at 15V
7nC maximum gate charge at 10V
Logic level gate with 3V maximum threshold voltage at 250μA
Product Advantages
High performance trench MOSFET technology
Suitable for a wide range of power management and switching applications
Small 1206 ChipFET package for space-constrained designs
Key Technical Parameters
Drain-source voltage: 30V
Continuous drain current: 4A at 25°C
On-resistance: 65mΩ maximum at 3.1A, 10V
Input capacitance: 220pF maximum at 15V
Gate charge: 7nC maximum at 10V
Threshold voltage: 3V maximum at 250μA
Quality and Safety Features
RoHS compliant
Operates in the -55°C to 150°C temperature range
Compatibility
Suitable for surface mount applications
Application Areas
Power management
Switching circuits
General-purpose power control
Product Lifecycle
Currently in production
No known plans for discontinuation
Key Reasons to Choose This Product
High performance trench MOSFET technology
Low on-resistance for efficient power switching
Small 1206 package for space-constrained designs
Wide operating temperature range
RoHS compliance for environmental friendliness
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