Manufacturer Part Number
SI5457DC-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistor, FET, MOSFET (Single)
Product Features and Performance
P-Channel MOSFET
Trench technology
Operating temperature range: -55°C to 150°C
Drain-to-source voltage (Vdss): 20V
Maximum gate-to-source voltage (Vgs): ±12V
On-resistance (Rds(on)): 36mOhm @ 4.9A, 4.5V
Continuous drain current (Id): 6A @ 25°C
Input capacitance (Ciss): 1000pF @ 10V
Power dissipation: 5.7W @ Tc
Gate charge (Qg): 38nC @ 10V
Product Advantages
Efficient trench technology for low on-resistance
Wide operating temperature range
Compact 1206-8 ChipFET package
Key Technical Parameters
Drain-to-source voltage (Vdss): 20V
Maximum gate-to-source voltage (Vgs): ±12V
On-resistance (Rds(on)): 36mOhm
Continuous drain current (Id): 6A
Input capacitance (Ciss): 1000pF
Power dissipation: 5.7W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation
Compatibility
Surface mount (1206-8 ChipFET package)
Application Areas
Power management
Motor control
Switching circuits
General-purpose electronic applications
Product Lifecycle
Current product, no discontinuation planned
Replacement/upgrade options available
Key Reasons to Choose This Product
Efficient trench MOSFET technology for low on-resistance
Wide operating temperature range (-55°C to 150°C)
Compact and space-saving 1206-8 ChipFET package
Suitable for high-power, high-temperature applications
RoHS3 compliance for environmental friendliness