Manufacturer Part Number
SI5403DC-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SI5403DC-T1-GE3 is a single P-channel TrenchFET MOSFET transistor from Vishay / Siliconix.
Product Features and Performance
30V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
30mΩ Maximum On-Resistance (Rds(on)) at 7.2A Drain Current, 10V Gate Voltage
6A Continuous Drain Current (Id) at 25°C
1340pF Maximum Input Capacitance (Ciss) at 15V Drain to Source Voltage
5W Power Dissipation (Max) at 25°C Ambient Temperature
3W Power Dissipation (Max) at 25°C Case Temperature
Product Advantages
Low on-resistance for efficient power switching
High power handling capability
Compact surface mount package
Key Technical Parameters
P-Channel MOSFET
30V Drain to Source Voltage (Vdss)
3V Maximum Gate Threshold Voltage (Vgs(th)) at 250μA Drain Current
5V to 10V Drive Voltage Range
42nC Maximum Gate Charge (Qg) at 10V Gate Voltage
Quality and Safety Features
RoHS3 Compliant
Qualified to AEC-Q101 automotive standard
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Switching power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
This product is an active, available part from Vishay / Siliconix.
Several Key Reasons to Choose This Product
High power handling and efficiency with low on-resistance
Compact surface mount package for space-constrained designs
Robust design qualified to automotive standards
Wide operating temperature range of -55°C to 150°C