Manufacturer Part Number
SI4953ADY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance dual P-channel MOSFET in a compact 8-SOIC package.
Product Features and Performance
Dual P-channel MOSFET design
Low on-resistance of 53 mΩ
30V drain-to-source voltage rating
7A continuous drain current rating
Logic-level gate drive (1V threshold voltage)
Low gate charge of 25 nC
Product Advantages
Compact 8-SOIC package
Efficient power handling
Suitable for a wide range of power switching applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
On-resistance (Rds(on)): 53 mΩ @ 4.9A, 10V
Drain current (Id): 3.7A continuous at 25°C
Gate-to-source threshold voltage (Vgs(th)): 1V @ 250 μA
Gate charge (Qg): 25 nC @ 10V
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Switching power supplies
Motor drives
Automotive electronics
Industrial control systems
Product Lifecycle
Currently in active production
No plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Efficient power handling with low on-resistance
Compact 8-SOIC package for space-constrained designs
Suitable for a wide range of power switching applications
Reliable and safe operation with RoHS3 compliance
Ongoing availability and potential for replacement or upgrade
SI4953DY-NLElectro-Films (EFI) / Vishay
SI4953ADYVIS