SI4946CDY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4946CDY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Dual N-Channel TrenchFET Power MOSFET

Product Features and Performance

60V Drain-to-Source Voltage

9mΩ On-Resistance @ 5.2A, 10V

350pF Input Capacitance @ 30V

10nC Gate Charge @ 10V

2A Continuous Drain Current @ 25°C

-55°C to 150°C Operating Temperature Range

2W Power Dissipation @ 25°C

8W Power Dissipation @ 100°C

Product Advantages

High power density

Low on-resistance

Fast switching

Excellent thermal performance

Key Technical Parameters

Drain-to-Source Voltage: 60V

On-Resistance: 40.9mΩ

Input Capacitance: 350pF

Gate Charge: 10nC

Continuous Drain Current: 5.2A

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 Compliant

Dual N-Channel MOSFET Configuration

Surface Mount Packaging

Compatibility

Compatible with a wide range of electronic applications

Application Areas

Power management

Motor control

Switching power supplies

Audio amplifiers

Industrial control

Product Lifecycle

Currently available

No plans for discontinuation

Replacement options available if needed

Key Reasons to Choose This Product

High power density and efficiency

Low on-resistance for low power loss

Fast switching for improved system performance

Excellent thermal management for reliable operation

Dual channel configuration for design flexibility

Compliance with industry standards for safety and reliability