SI4943CDY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4943CDY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance dual P-channel TrenchFET power MOSFET in an 8-SOIC package.

Product Features and Performance

Dual P-channel MOSFET design

Optimized for low on-resistance and high-speed switching

Low gate charge and gate-source threshold voltage for logic-level operation

Wide operating temperature range of -50°C to 150°C

Maximum power dissipation of 3.1W

Product Advantages

Compact 8-SOIC surface mount package

Excellent thermal performance

Suitable for high-frequency power conversion and control applications

Efficient power management in space-constrained designs

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

On-Resistance (Rds(on)): 19.2mΩ @ 8.3A, 10V

Continuous Drain Current (ID): 8A @ 25°C

Input Capacitance (Ciss): 1945pF @ 10V

Gate-to-Source Threshold Voltage (Vgs(th)): 3V @ 250μA

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Can be used as a replacement or upgrade for similar dual P-channel MOSFET products

Application Areas

High-frequency power conversion and control circuits

Power management in consumer electronics, industrial, and automotive applications

Product Lifecycle

Currently available and actively supported by the manufacturer

No immediate plans for discontinuation

Several Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

Compact and space-saving 8-SOIC package

Logic-level gate drive for easy interface with control circuitry

Wide operating temperature range for diverse applications

RoHS3 compliance for use in environmentally-conscious designs