Manufacturer Part Number
SI4936CDY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Dual N-Channel TrenchFET Power MOSFET
Product Features and Performance
30V Drain-Source Voltage
40mOhm On-Resistance @ 5A, 10V
8A Continuous Drain Current @ 25°C
325pF Input Capacitance @ 15V
Logic Level Gate with 3V Threshold Voltage
9nC Gate Charge @ 10V
Product Advantages
Excellent power handling and efficiency
Suitable for high-frequency switching applications
Low gate drive requirements
Space-saving dual-channel design
Key Technical Parameters
Drain-Source Voltage: 30V
On-Resistance: 40mOhm
Continuous Drain Current: 5.8A
Input Capacitance: 325pF
Gate Threshold Voltage: 3V
Gate Charge: 9nC
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Surface mount 8-SOIC package
Application Areas
Switch-mode power supplies
Motor drives
Automotive electronics
Industrial controls
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power handling and efficiency
Suitable for high-frequency switching applications
Low gate drive requirements
Dual-channel design for space-saving
Reliable performance across wide temperature range
RoHS3 compliance for environmental sustainability