SI4922BDY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4922BDY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Dual N-Channel MOSFET with high performance and high power density in a small 8-SOIC package.

Product Features and Performance

2 N-Channel MOSFETs in a single package

Low on-resistance (RDS(on)) of 16 mΩ at 5 A, 10 V

High current rating of 8 A continuous at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance (Ciss) of 2070 pF at 15 V

Low gate charge (Qg) of 62 nC at 10 V

Product Advantages

High power density in a small package

Efficient power conversion with low losses

Suitable for high current, high frequency switching applications

Robust design with wide temperature range

Key Technical Parameters

Drain-to-Source Voltage (VDS): 30 V

Gate-to-Source Voltage (VGS): ±20 V

Continuous Drain Current (ID): 8 A at 25°C

On-Resistance (RDS(on)): 16 mΩ at 5 A, 10 V

Input Capacitance (Ciss): 2070 pF at 15 V

Gate Charge (Qg): 62 nC at 10 V

Quality and Safety Features

RoHS3 compliant

Suitable for lead-free assembly

Compatibility

This MOSFET is compatible with various high-power, high-frequency applications such as:

DC-DC converters

Motor drives

Power supplies

Lighting ballasts

Wireless power transfer

Application Areas

Industrial electronics

Automotive electronics

Consumer electronics

Telecommunications equipment

Product Lifecycle

The SI4922BDY-T1-E3 is an active product, and Vishay continues to manufacture and support it. Replacement or upgraded options may become available in the future as technology evolves.

Key Reasons to Choose This Product

High power density in a compact 8-SOIC package

Low on-resistance and high current capability for efficient power conversion

Wide operating temperature range for use in diverse applications

Low input capacitance and gate charge for high-frequency switching

RoHS3 compliance for use in modern, environmentally-friendly designs