SI4914BDY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4914BDY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel dual MOSFET transistors in a compact SOIC package.

Product Features and Performance

2 N-Channel (Half Bridge) configuration

30V Drain to Source Voltage (Vdss)

21mOhm Rds On (Max) @ Id, Vgs

4A, 8A Continuous Drain Current (Id) @ 25°C

7V Vgs(th) (Max) @ Id

5nC Gate Charge (Qg) (Max) @ Vgs

-55°C ~ 150°C Operating Temperature Range

Product Advantages

Compact SOIC package

Low on-resistance

High current capability

Wide temperature range

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V

Continuous Drain Current (Id) @ 25°C: 8.4A, 8A

Vgs(th) (Max) @ Id: 2.7V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V

Operating Temperature Range: -55°C ~ 150°C

Quality and Safety Features

RoHS3 Compliant

8-SOIC package

Compatibility

Surface Mount

Application Areas

Power management

Motor control

Switching applications

Product Lifecycle

Currently available, no known discontinuation or upgrade plans.

Key Reasons to Choose This Product

Compact size

Low on-resistance

High current capability

Wide temperature range

RoHS compliance

Surface mount compatibility