SI4888DY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4888DY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel TrenchFET power MOSFET

Designed for use in high-frequency, high-efficiency power conversion applications

Product Features and Performance

Low on-resistance (RDS(on)) down to 7 mΩ

Fast switching speed

High-temperature operation up to 150°C

Low gate charge (Qg) for efficient switching

Product Advantages

Excellent power density and energy efficiency

Reliable performance in demanding applications

Compact and space-saving design

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Maximum Gate-Source Voltage (Vgs): ±20 V

Continuous Drain Current (Id): 11 A

Power Dissipation (Max): 1.6 W

Quality and Safety Features

RoHS3 compliant

ESD protection

Compatibility

Designed for use in a variety of power conversion and control applications

Application Areas

Switch-mode power supplies

DC-DC converters

Motor drives

Class-D audio amplifiers

Inverters

General-purpose power switching

Product Lifecycle

This product is an active and currently available part from the manufacturer.

Replacement or upgrade options may be available in the future as technology evolves.

Several Key Reasons to Choose This Product

Excellent performance in high-frequency, high-efficiency power conversion applications

Low on-resistance and fast switching speed for improved energy efficiency

Reliable high-temperature operation for demanding environments

Compact and space-saving design for flexible implementation

RoHS3 compliance for environmental responsibility