SI4884BDY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4884BDY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

This is a discrete semiconductor product, specifically a single N-channel MOSFET transistor.

Product Features and Performance

Trench MOSFET technology

Low on-resistance of 9 mΩ at 10 A, 10 V

High current capability of 16.5 A at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 1525 pF at 15 V

Maximum power dissipation of 2.5 W at Ta and 4.45 W at Tc

Gate threshold voltage of 3 V at 250 μA

Gate charge of 35 nC at 10 V

Product Advantages

Efficient power conversion and control

Compact surface mount package

Suitable for a wide range of applications

Key Technical Parameters

Drain-to-source voltage (Vdss): 30 V

Gate-to-source voltage (Vgs): ±20 V

On-resistance (Rds(on)): 9 mΩ at 10 A, 10 V

Continuous drain current (Id): 16.5 A at 25°C

Input capacitance (Ciss): 1525 pF at 15 V

Quality and Safety Features

RoHS3 compliant

8-SOIC package

Compatibility

This MOSFET is compatible with a wide range of electronic circuits and systems that require efficient power switching and control.

Application Areas

Power supplies

Motor drives

Switching regulators

Converters

Amplifiers

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and widely available. There are no immediate plans for discontinuation, and suitable replacement or upgrade options are likely to be available in the future.

Key Reasons to Choose This Product

Excellent performance-to-size ratio with low on-resistance and high current capability

Wide operating temperature range for versatile applications

Efficient power switching and control capabilities

Compact surface mount package for space-constrained designs

RoHS3 compliance for environmentally-friendly applications