Manufacturer Part Number
SI4830CDY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This product is a discrete semiconductor device, specifically a transistor in the form of a Field Effect Transistor (FET) or MOSFET (Metal Oxide Semiconductor Field Effect Transistor) array.
Product Features and Performance
2 N-Channel (Half Bridge) configuration
30V Drain to Source Voltage (Vdss)
20mOhm maximum On-Resistance (Rds(on)) at 8A, 10V
8A maximum Continuous Drain Current (Id) at 25°C
950pF maximum Input Capacitance (Ciss) at 15V
Logic Level Gate with 3V maximum Gate-Source Threshold Voltage (Vgs(th)) at 1mA
25nC maximum Gate Charge (Qg) at 10V
Product Advantages
Efficient power handling capabilities
Low On-Resistance for low power loss
Logic Level Gate for easy interface with control circuits
Compact 8-SOIC surface mount package
Key Technical Parameters
Voltage: 30V Drain to Source (Vdss)
Current: 8A Continuous Drain (Id)
Resistance: 20mOhm maximum On-Resistance (Rds(on))
Capacitance: 950pF maximum Input Capacitance (Ciss)
Gate Characteristics: 3V maximum Gate-Source Threshold Voltage (Vgs(th)), 25nC maximum Gate Charge (Qg)
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
This MOSFET device is compatible with a wide range of electronic circuits and applications that require efficient power switching and control.
Application Areas
Power management circuits
Motor control
Battery charging/discharging
Switching power supplies
General purpose power switching
Product Lifecycle
This product is an active and readily available component. Vishay/Siliconix continues to manufacture and support this device, and there are no known plans for discontinuation.
Key Reasons to Choose This Product
Efficient power handling capabilities with low On-Resistance
Logic Level Gate for easy interface with control circuits
Compact surface mount package
Wide operating temperature range
RoHS3 compliance for environmental responsibility
Ongoing manufacturer support and availability