SI4825DDY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4825DDY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-Channel MOSFET with low on-resistance and fast switching speed.

Product Features and Performance

Low on-resistance down to 12.5 mΩ

High continuous drain current up to 14.9A

Fast switching speed

Wide operating temperature range of -55°C to 150°C

Low gate charge of 86 nC at 10V

Excellent power dissipation up to 5W

Product Advantages

Efficient power handling

Reliable and robust performance

Suitable for a wide range of applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

Gate-to-Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 12.5 mΩ @ 10A, 10V

Continuous Drain Current (Id): 14.9A @ 25°C

Input Capacitance (Ciss): 2550 pF @ 15V

Power Dissipation: 2.7W @ Ta, 5W @ Tc

Quality and Safety Features

ROHS3 compliant

Suitable for high-temperature and harsh environment applications

Compatibility

Surface mount package (8-SOIC)

Compatible with a wide range of electronic circuits and systems

Application Areas

Power management circuits

Motor control

Automotive electronics

Industrial equipment

Consumer electronics

Product Lifecycle

Current production model

Replacement and upgrade options available

Key Reasons to Choose this Product

Excellent power handling and efficiency

Reliable and robust performance

Wide operating temperature range

Fast switching speed

Compact and easy-to-use surface mount package