SI4816BDY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4816BDY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Products

Transistors FETs, MOSFETs Arrays

Product Features and Performance

RoHS3 Compliant

8-SOIC (0.154", 3.90mm Width) package

-55°C ~ 150°C operating temperature range

1W, 1.25W power rating

2 N-Channel (Half Bridge) configuration

30V drain-to-source voltage

5mOhm maximum on-resistance at 6.8A, 10V

MOSFET (Metal Oxide) technology

8A, 8.2A continuous drain current at 25°C

Logic Level Gate FET feature

3V maximum gate-to-source threshold voltage at 250A

10nC maximum gate charge at 5V

Product Advantages

RoHS3 compliance for environmental friendliness

High power density and efficient performance

Broad operating temperature range

Reliable N-Channel MOSFET design

Key Technical Parameters

Package: 8-SOIC (0.154", 3.90mm Width)

Mounting Type: Surface Mount

Configuration: 2 N-Channel (Half Bridge)

Drain to Source Voltage (Vdss): 30V

On-Resistance (Rds On): 18.5mOhm @ 6.8A, 10V

Continuous Drain Current (Id): 5.8A, 8.2A @ 25°C

Gate-to-Source Threshold Voltage (Vgs(th)): 3V @ 250A

Gate Charge (Qg): 10nC @ 5V

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Designed for reliable and safe operation

Compatibility

Surface mount design for integration into a variety of applications

Application Areas

Versatile use in power management, motor control, and other applications requiring high-performance N-Channel MOSFETs

Product Lifecycle

Current product offering, no information on discontinuation or replacement

Key Reasons to Choose This Product

RoHS3 compliance for environmental friendliness

High power density and efficient performance

Broad operating temperature range

Reliable N-Channel MOSFET design

Suitable for a variety of power management and motor control applications