Manufacturer Part Number
SI4816BDY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Arrays
Product Features and Performance
RoHS3 Compliant
8-SOIC (0.154", 3.90mm Width) package
-55°C ~ 150°C operating temperature range
1W, 1.25W power rating
2 N-Channel (Half Bridge) configuration
30V drain-to-source voltage
5mOhm maximum on-resistance at 6.8A, 10V
MOSFET (Metal Oxide) technology
8A, 8.2A continuous drain current at 25°C
Logic Level Gate FET feature
3V maximum gate-to-source threshold voltage at 250A
10nC maximum gate charge at 5V
Product Advantages
RoHS3 compliance for environmental friendliness
High power density and efficient performance
Broad operating temperature range
Reliable N-Channel MOSFET design
Key Technical Parameters
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss): 30V
On-Resistance (Rds On): 18.5mOhm @ 6.8A, 10V
Continuous Drain Current (Id): 5.8A, 8.2A @ 25°C
Gate-to-Source Threshold Voltage (Vgs(th)): 3V @ 250A
Gate Charge (Qg): 10nC @ 5V
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Designed for reliable and safe operation
Compatibility
Surface mount design for integration into a variety of applications
Application Areas
Versatile use in power management, motor control, and other applications requiring high-performance N-Channel MOSFETs
Product Lifecycle
Current product offering, no information on discontinuation or replacement
Key Reasons to Choose This Product
RoHS3 compliance for environmental friendliness
High power density and efficient performance
Broad operating temperature range
Reliable N-Channel MOSFET design
Suitable for a variety of power management and motor control applications
SI4818DY-T1SILICONIX
SI4816BElectro-Films (EFI) / Vishay