SI4804CDY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4804CDY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Dual N-Channel TrenchFET Power MOSFET

Product Features and Performance

Low RDS(on) of 22 mΩ at 7.5 A, 10 V

High current capability of 8 A continuous drain current at 25°C

Low input capacitance of 865 pF at 15 V

Low gate charge of 23 nC at 10 V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Efficient power conversion

Compact design

Excellent thermal performance

Key Technical Parameters

Drain-Source Voltage (VDS): 30 V

Gate-Source Voltage (VGS): ±20 V

On-Resistance (RDS(on)): 22 mΩ

Continuous Drain Current (ID): 8 A

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Standard 8-SOIC package

Compatible with common surface mount assembly processes

Application Areas

Power supplies

Motor drives

Switching regulators

Battery chargers

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacement and upgrade options available

Key Reasons to Choose This Product

Excellent performance-to-size ratio

Reliable and robust design

Suitable for a wide range of power electronics applications

Cost-effective solution for high-efficiency power conversion