Manufacturer Part Number
SI4670DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Dual N-Channel MOSFET with low on-resistance in an 8-SOIC package
Product Features and Performance
Trench MOSFET technology
25V drain-source voltage
23mΩ maximum on-resistance
8A continuous drain current
680pF maximum input capacitance
Logic-level gate
Product Advantages
Compact 8-SOIC surface mount package
Low on-resistance for efficient power conversion
Suitable for a variety of power management applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 25V
On-Resistance (Rds(on)): 23mΩ
Continuous Drain Current (Id): 8A
Input Capacitance (Ciss): 680pF
Gate Threshold Voltage (Vgs(th)): 2.2V
Gate Charge (Qg): 18nC
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Suitable for surface mount applications
Application Areas
Power management
Switching circuits
Amplifiers
Motor control
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from Vishay/Siliconix.
Key Reasons to Choose This Product
Compact 8-SOIC package for space-constrained designs
Low on-resistance for efficient power conversion
Suitable for a wide range of power management applications
Robust operating temperature range and RoHS3 compliance
Proven Trench MOSFET technology from a reputable manufacturer