Manufacturer Part Number
SI4564DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Arrays
Product Features and Performance
N and P-Channel MOSFET Configuration
TrenchFET Series
Logic Level Gate FET Feature
Wide Operating Temperature Range: -55°C to 150°C
High Power Handling Capability: 3.1W, 3.2W
Low On-Resistance: 17.5mOhm @ 8A, 10V
High Continuous Drain Current: 10A, 9.2A
Low Input Capacitance: 855pF @ 20V
Low Gate Charge: 31nC @ 10V
Product Advantages
Efficient power handling
Low power losses
Fast switching
Compact size
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Current Continuous Drain (Id) @ 25°C: 10A, 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Vgs(th) (Max) @ Id: 2V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Package: 8-SOIC (0.154", 3.90mm Width)
Tape & Reel (TR) Packaging
Application Areas
Power management
Switching circuits
Motor control
Industrial electronics
Product Lifecycle
Current product offering, not nearing discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Fast switching performance
Small, compact package
Wide operating temperature range
RoHS compliance for use in modern electronics