Manufacturer Part Number
SI4484EY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
100V Drain-Source Voltage
34mΩ maximum On-Resistance
8A Continuous Drain Current at 25°C
8W Power Dissipation
-55°C to 175°C Operating Temperature Range
Fast Switching Speed
Robust Trench MOSFET Technology
Product Advantages
Excellent Power Efficiency
High Power Density
Reliable Operation in Harsh Environments
Suitable for Various Power Management Applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 34mΩ @ 6.9A, 10V
Threshold Voltage (Vgs(th)): 2V @ 250μA (Min)
Gate Charge (Qg): 30nC @ 10V
Quality and Safety Features
RoHS3 Compliant
8-SOIC Package for Surface Mount
Compatibility
Compatible with various power management and control applications
Application Areas
Power Supplies
Motor Drives
Inverters
Converters
Industrial Electronics
Automotive Electronics
Product Lifecycle
The SI4484EY-T1-E3 is an actively supported product and not nearing discontinuation.
Replacement or upgrade options may be available from Vishay/Siliconix.
Key Reasons to Choose This Product
Excellent power efficiency and high power density
Reliable operation in harsh environments (-55°C to 175°C)
Robust Trench MOSFET technology for enhanced performance
Suitable for a wide range of power management applications
RoHS3 compliance for environmentally-friendly usage