SI4455DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4455DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-channel enhancement-mode power MOSFET

Product Features and Performance

Optimized for efficient power switching and control applications

High power density and efficiency

Low on-resistance and fast switching speed

Wide operating temperature range of -55°C to 150°C

Product Advantages

Reduced power consumption and heat generation

Improved system reliability and performance

Suitable for a wide range of power management and control applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 150V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V

Continuous Drain Current (Id) @ 25°C: 2A

Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V

Power Dissipation (Max): 5.9W

Quality and Safety Features

RoHS3 compliant

Reliable and durable performance

Robust design for harsh environments

Compatibility

Designed for surface mount applications

Compatible with a wide range of power management and control systems

Application Areas

Power management and control in industrial, automotive, and consumer electronics

Switching power supplies, motor drives, and other power conversion applications

Product Lifecycle

Currently available

No known plans for discontinuation

Replacement or upgrade options may be available from Vishay/Siliconix

Key Reasons to Choose This Product

High efficiency and power density

Fast switching speed and low on-resistance

Wide operating temperature range

Robust and reliable performance

Compatibility with a variety of power management and control applications