SI4442DY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4442DY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

This is a discrete semiconductor product, specifically a transistor FET, MOSFET single.

Product Features and Performance

N-Channel MOSFET

Trench technology

30V drain-to-source voltage

15A continuous drain current

5 mOhm maximum on-resistance

Wide operating temperature range of -55°C to 150°C

Low gate charge of 50 nC at 4.5V

Product Advantages

Excellent power handling and efficiency

High reliability and ruggedness

Compact surface mount package

Key Technical Parameters

Drain-to-source voltage (Vdss): 30V

Gate-to-source voltage (Vgs): ±12V

On-resistance (Rds(on)): 4.5 mOhm

Continuous drain current (Id): 15A

Power dissipation (Pd): 1.6W

Quality and Safety Features

RoHS3 compliant

8-SOIC package

Compatibility

Standard MOSFET footprint and pinout

Application Areas

Power management

Motor control

Switching applications

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and available.

Replacements or upgrades may be available in the future.

Key Reasons to Choose This Product

Excellent power handling and efficiency

High reliability and ruggedness

Compact surface mount package

Wide operating temperature range

Low gate charge for improved efficiency