Manufacturer Part Number
SI4425FDY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
Trench FET Generation IV Technology
Wide Operating Temperature Range: -55°C to 150°C
High Drain Current Capability: Up to 12.7A (Ta), 18.3A (Tc)
Low On-Resistance: 9.5 mOhm @ 10A, 10V
Fast Switching Speed
High Input Capacitance: 1620 pF @ 15V
Product Advantages
Efficient power conversion
Compact surface mount package
Wide temperature range for diverse applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): +16V, -20V
Power Dissipation: 2.3W (Ta), 4.8W (Tc)
Gate Charge (Qg): 41 nC @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable surface mount package (8-SOIC)
Compatibility
Compatible with various electronic circuits and power conversion systems
Application Areas
Power management
Motor control
Switching power supplies
Automotive electronics
Product Lifecycle
Current product, no discontinuation plans
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent performance and efficiency
Wide operating temperature range
Compact and reliable surface mount package
Compatibility with diverse electronic systems
Ongoing product support and availability of replacements