Manufacturer Part Number
SI4420BDY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel enhancement mode power MOSFET
Product Features and Performance
TrenchFET technology for low on-resistance and fast switching
Low gate charge for efficient switching
Rugged design with high avalanche energy capability
Excellent thermal stability and reliability
Product Advantages
Optimized for DC-DC converters, motor drives, and power amplifiers
Suitable for high-frequency, high-efficiency power conversion applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 30 V
Maximum Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 8.5 mΩ @ 13.5 A, 10 V
Continuous Drain Current (Id): 9.5 A @ 25°C
Power Dissipation (Pd): 1.4 W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation (-55°C to 150°C)
Compatibility
Compatible with 8-SOIC (0.154", 3.90mm Width) package
Application Areas
DC-DC converters
Motor drives
Power amplifiers
High-frequency, high-efficiency power conversion applications
Product Lifecycle
Currently available, no plans for discontinuation
Several Key Reasons to Choose This Product
Exceptional performance and efficiency with TrenchFET technology
Optimized for high-frequency, high-efficiency power conversion
Rugged and reliable design with high avalanche energy capability
Compatibility with standard 8-SOIC package for easy integration
Suitable for a wide range of power electronics applications