Manufacturer Part Number
SI4384DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel enhancement-mode power MOSFET in a surface-mount package.
Product Features and Performance
Suitable for high-frequency, high-current switching applications
Low on-resistance and fast switching speed
Rugged construction and reliable performance
Product Advantages
Optimized for high-frequency, high-current switching
Excellent thermal management
Robust and reliable design
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Current Continuous Drain (Id) @ 25°C: 10A
Power Dissipation (Max): 1.47W
Vgs(th) (Max) @ Id: 3V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for surface mount applications
Compatible with standard MOSFET drivers and control circuits
Application Areas
High-frequency, high-current switching applications
Power supplies, motor drives, and other industrial electronics
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade options available from Vishay/Siliconix
Key Reasons to Choose This Product
Optimized for high-frequency, high-current switching
Excellent thermal management and reliability
Robust and reliable design for high-reliability applications
Compatibility with standard MOSFET drivers and control circuits
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