Manufacturer Part Number
SI4368DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel MOSFET with ultra-low on-resistance and high power density
Product Features and Performance
Extremely low on-resistance of 3.2 mOhm @ 25A, 10V
High current capability of 17A continuous drain current
Wide operating temperature range of -55°C to 150°C
High power dissipation of 1.6W
Low gate charge of 80 nC @ 4.5V
Fast switching speed
Robust trench MOSFET technology
Product Advantages
Excellent power efficiency due to ultra-low on-resistance
High power density and compact design
Wide temperature range for versatile applications
Reliable and durable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs) Max: ±12V
Input Capacitance (Ciss) Max: 8340 pF @ 15V
Gate Charge (Qg) Max: 80 nC @ 4.5V
Threshold Voltage (Vgs(th)) Max: 1.8V @ 250A
Quality and Safety Features
RoHS3 compliant
Reliable surface mount package (8-SOIC)
Compatibility
Compatible with a wide range of electronic devices and circuits
Application Areas
Power management
Motor control
Industrial automation
Automotive electronics
Product Lifecycle
Currently available
No discontinuation plans
Replacements and upgrades available as needed
Several Key Reasons to Choose This Product
Exceptional power efficiency and performance
High current capability and power density
Wide operating temperature range
Robust and reliable trench MOSFET technology
RoHS compliance for environmental friendliness