SI4286DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4286DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance dual N-channel MOSFET in a compact SOIC package.

Product Features and Performance

Optimized for efficient power conversion and switching

Low on-resistance for low power loss

High switching speed

Stable performance across wide temperature range

Product Advantages

Compact SOIC package for space-efficient design

Excellent thermal management

Reliable operation in demanding applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 40V

On-Resistance (Rds(on)): 32.5mΩ @ 8A, 10V

Continuous Drain Current (Id): 7A @ 25°C

Input Capacitance (Ciss): 375pF @ 20V

Gate Threshold Voltage (Vgs(th)): 2.5V @ 250µA

Gate Charge (Qg): 10.5nC @ 10V

Quality and Safety Features

RoHS3 compliant

Qualified for industrial and automotive applications

Compatibility

Compatible with standard MOSFET drivers and control circuits

Application Areas

Switching power supplies

Motor drives

Lighting and LED drivers

Industrial automation and control

Product Lifecycle

Currently in production

Replacements and upgrades available as needed

Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

Compact and space-saving design

Reliable operation in demanding environments

Broad compatibility with standard control and driver circuits

Extensive industrial and automotive qualifications