Manufacturer Part Number
SI4202DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Dual N-Channel MOSFET
Product Features and Performance
Trench technology for low on-resistance
Logic-level gate for easy driving
High continuous current rating up to 12.1A
Low gate charge for high switching speed
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power handling
Reliable performance
Compact surface-mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 14mΩ @ 8A, 10V
Continuous Drain Current (Id): 12.1A @ 25°C
Input Capacitance (Ciss): 710pF @ 15V
Gate Threshold Voltage (Vgs(th)): 2.5V @ 250μA
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various electronic circuit designs
Application Areas
Switching power supplies
Motor drives
Automotive electronics
Industrial control systems
Product Lifecycle
Actively available
No known discontinuation plans
Replacement or upgrade options available
Key Reasons to Choose This Product
Efficient power handling with low on-resistance
High switching speed and current capability
Wide operating temperature range for diverse applications
Reliable performance in high-reliability environments
Compact surface-mount package for space-constrained designs
SI4201-GMRSIICON
Si4200DY-T1-E3Electro-Films (EFI) / Vishay