Manufacturer Part Number
SI3993CDV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Vishay / Siliconix SI3993CDV-T1-GE3 is a discrete semiconductor product, specifically a transistor in the FET (Field-Effect Transistor) and MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) arrays category.
Product Features and Performance
TrenchFET technology
2 P-Channel (Dual) configuration
30V Drain to Source Voltage (Vdss)
111mOhm Max RDS(on) @ 2.5A, 10V
9A Continuous Drain Current (ID) @ 25°C
210pF Max Input Capacitance (Ciss) @ 15V
2V Max Gate Threshold Voltage (Vgs(th)) @ 250μA
8nC Max Gate Charge (Qg) @ 10V
Product Advantages
High efficiency and low power loss
Fast switching and low on-resistance
Suitable for high-frequency and high-power applications
Key Technical Parameters
Package: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C to 150°C (TJ)
Power Rating: 1.4W Max
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic devices and circuits requiring P-Channel MOSFET transistors
Application Areas
Power management circuits
Switching applications
Amplifier circuits
Motor control
Product Lifecycle
Current production model
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance, fast switching, and high current handling
Compact and efficient design suitable for space-constrained applications
Extensive operating temperature range for use in diverse environments
RoHS3 compliance for environmental responsibility
Compatibility with a wide range of electronic systems and circuits