Manufacturer Part Number
SI3932DV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Dual N-Channel MOSFET
Product Features and Performance
Trench MOSFET design
Low on-resistance
Fast switching speed
High current handling capability
Logic-level gate drive
Product Advantages
Efficient power conversion
Compact and space-saving design
Reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 58mΩ
Continuous Drain Current (Id): 3.7A
Input Capacitance (Ciss): 235pF
Gate Threshold Voltage (Vgs(th)): 2.2V
Gate Charge (Qg): 6nC
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Power management
Motor control
Switch-mode power supplies
Portable electronics
Industrial automation
Product Lifecycle
This product is currently in production and not nearing discontinuation
Replacement or upgraded models may become available in the future
Key Reasons to Choose this Product
Excellent power efficiency and performance
Compact and space-saving design
Reliable operation in harsh environments
Suitable for a wide range of applications
Proven track record of Vishay / Siliconix quality and reliability