SI3851DV-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI3851DV-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

RoHS3 Compliant

6-TSOP Packaging

Surface Mount

SOT-23-6 Thin, TSOT-23-6 Package

LITTLE FOOT Series

Tape & Reel (TR) Packaging

Operating Temperature: -55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss): 30 V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 200mOhm @ 1.8A, 10V

MOSFET (Metal Oxide) Technology

Continuous Drain Current (Id) @ 25°C: 1.6A (Ta)

Schottky Diode (Isolated) FET Feature

Power Dissipation (Max): 830mW (Ta)

P-Channel FET Type

Vgs(th) (Max) @ Id: 1V @ 250A (Min)

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V

Product Advantages

RoHS3 Compliant

Compact 6-TSOP Surface Mount Package

Wide Operating Temperature Range

Low On-Resistance

Isolated Schottky Diode

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 200mOhm @ 1.8A, 10V

Continuous Drain Current (Id) @ 25°C: 1.6A (Ta)

Power Dissipation (Max): 830mW (Ta)

Vgs(th) (Max) @ Id: 1V @ 250A (Min)

Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V

Quality and Safety Features

RoHS3 Compliant

Wide Operating Temperature Range: -55°C ~ 150°C (TJ)

Compatibility

Compatible with various electronic circuits and systems that require P-Channel MOSFETs

Application Areas

Suitable for a wide range of electronic applications that require P-Channel MOSFETs, such as:

- Power management circuits

- Switch-mode power supplies

- Motor control

- Battery charging circuits

- General-purpose switching applications

Product Lifecycle

Currently in production

Replacements or upgrades may be available in the future as technology evolves

Key Reasons to Choose This Product

RoHS3 compliance for environmentally-friendly applications

Compact 6-TSOP surface mount package for space-constrained designs

Wide operating temperature range for demanding environments

Low on-resistance for efficient power switching

Isolated Schottky diode for better circuit protection

Suitable for a wide range of electronic applications requiring P-Channel MOSFETs