SI3590DV-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI3590DV-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete semiconductor product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

RoHS3 compliant

6-TSOP package

SOT-23-6 Thin, TSOT-23-6 package

TrenchFET series

Tape & Reel (TR) packaging

Operating temperature range: -55°C to 150°C

Power rating: 830mW

N and P-Channel configuration

Drain-to-Source voltage (Vdss): 30V

On-resistance (Rds(on)): 77mΩ @ 3A, 4.5V

MOSFET (Metal Oxide) technology

Continuous Drain Current (Id): 2.5A @ 25°C, 1.7A

Logic Level Gate FET feature

Threshold voltage (Vgs(th)): 1.5V @ 250μA

Gate charge (Qg): 4.5nC @ 4.5V

Surface mount type

Product Advantages

RoHS3 compliance

Compact package options

Wide operating temperature range

Low on-resistance

Logic level gate for easy drive

Key Technical Parameters

Manufacturer Part Number: SI3590DV-T1-GE3

Package: 6-TSOP, SOT-23-6 Thin, TSOT-23-6

Drain-to-Source voltage (Vdss): 30V

On-resistance (Rds(on)): 77mΩ @ 3A, 4.5V

Continuous Drain Current (Id): 2.5A @ 25°C, 1.7A

Threshold voltage (Vgs(th)): 1.5V @ 250μA

Gate charge (Qg): 4.5nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Compatibility

Compatible with various electronic circuits and systems requiring N and P-Channel MOSFETs

Application Areas

Suitable for a wide range of electronic applications, including power management, motor control, and general switching circuits

Product Lifecycle

Currently available, no information on discontinuation or replacements/upgrades

Several Key Reasons to Choose This Product

RoHS3 compliance for environmental responsibility

Compact package options for space-constrained designs

Wide operating temperature range for versatile applications

Low on-resistance for efficient power handling

Logic level gate for easy integration with control circuits