SI3447CDV-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI3447CDV-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

P-Channel MOSFET

Trench Technology

Drain-Source Voltage (Vdss): 12V

Gate-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 36mΩ @ 6.3A, 4.5V

Continuous Drain Current (Id): 7.8A @ 25°C

Input Capacitance (Ciss): 910pF @ 6V

Power Dissipation: 2W (Ta), 3W (Tc)

Gate Charge (Qg): 30nC @ 8V

Operating Temperature: -55°C to 150°C

Product Advantages

Trench technology for low on-resistance

High current handling capability

Low gate charge for efficient switching

Wide operating temperature range

Key Technical Parameters

Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

FET Type: P-Channel

Threshold Voltage (Vgs(th)): 1V @ 250A

Drive Voltage Range: 1.8V to 4.5V

Quality and Safety Features

RoHS3 Compliant

Suitable for safety-critical applications

Compatibility

Compatible with a wide range of electronic systems and circuits

Application Areas

Power management

Motor control

Switching circuits

Automotive electronics

Product Lifecycle

Current production model

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance, high current capability, and fast switching

Efficient operation with low gate charge

Robust design for wide temperature range

Compliance with RoHS3 standards for safety and environmental considerations

Compatibility with a variety of electronic systems and applications