SI3446ADV-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI3446ADV-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI3446ADV-T1-GE3 is a high-performance N-Channel MOSFET transistor.

Product Features and Performance

MOSFET (Metal Oxide) technology

N-Channel configuration

Drain to Source Voltage (Vdss) of 20V

Maximum Gate-Source Voltage (Vgs) of ±12V

Low on-resistance (Rds(on)) of 37mΩ @ 5.8A, 4.5V

Continuous Drain Current (Id) of 6A at 25°C

Input Capacitance (Ciss) of 640pF @ 10V

Power Dissipation of 2W at Ta, 3.2W at Tc

Wide Operating Temperature Range of -55°C to 150°C

Product Advantages

High efficiency and low power loss

Compact surface mount package

Suitable for a wide range of applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Maximum Gate-Source Voltage (Vgs): ±12V

On-resistance (Rds(on)): 37mΩ @ 5.8A, 4.5V

Continuous Drain Current (Id): 6A at 25°C

Input Capacitance (Ciss): 640pF @ 10V

Power Dissipation: 2W at Ta, 3.2W at Tc

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Meets stringent quality standards

Compatibility

Surface mount package (SOT-23-6 Thin, TSOT-23-6)

Suitable for Tape & Reel (TR) packaging

Application Areas

Switching power supplies

Motor drives

Power amplifiers

Industrial controls

Automotive electronics

Product Lifecycle

Currently available

No discontinuation announced

Several Key Reasons to Choose This Product

High efficiency and low power loss for improved energy savings

Compact surface mount package for space-constrained designs

Wide operating temperature range for demanding applications

Meets RoHS3 compliance for environmental responsibility

Reliable performance backed by Vishay/Siliconix's reputation