Manufacturer Part Number
SI3127DV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
P-Channel MOSFET
Low on-resistance
High current capability
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
High gate-source voltage rating (±20V)
Product Advantages
Excellent performance in power switching and control applications
Suitable for high-frequency, high-efficiency power conversion
Robust design for reliable operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Continuous Drain Current (Id): 3.5A (Ta), 13A (Tc)
On-Resistance (Rds(on)): 89mΩ @ 1.5A, 4.5V
Input Capacitance (Ciss): 833pF @ 20V
Power Dissipation: 2W (Ta), 4.2W (Tc)
Gate Charge (Qg): 30nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for surface mount applications
Tape and reel packaging
Application Areas
Power management
Power conversion
Motor control
Lighting control
Industrial electronics
Product Lifecycle
Current product offering
No near-term discontinuation plans
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High performance, low on-resistance MOSFET
Excellent switching characteristics for efficient power conversion
Wide operating temperature range for reliable operation
Robust design for industrial and high-reliability applications
RoHS compliance for environmental considerations