Manufacturer Part Number
SI1912EDH-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Dual N-channel TrenchFET MOSFET
Suitable for a wide range of power management and control applications
Product Features and Performance
20V Drain-Source Voltage
280mΩ maximum On-Resistance at 1.13A, 4.5V
13A continuous Drain Current at 25°C
450mV maximum Gate Threshold Voltage at 100μA
1nC maximum Gate Charge at 4.5V
Wide operating temperature range: -55°C to 150°C
Product Advantages
Logic-level gate drive
Excellent switching performance
High power density
Compact SC-70-6 package
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 280mΩ @ 1.13A, 4.5V
Drain Current (Id): 1.13A continuous at 25°C
Gate Threshold Voltage (Vgs(th)): 450mV @ 100μA
Gate Charge (Qg): 1nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Meets industrial-grade reliability requirements
Compatibility
Compatible with a wide range of power management and control applications
Application Areas
Power management circuits
Motor control
Switching power supplies
LED drivers
Battery chargers
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Compact and space-saving package
Suitable for a wide range of power applications
Reliable and industrial-grade quality
SI1912EDHElectro-Films (EFI) / Vishay