Manufacturer Part Number
SI1305DL-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
P-Channel MOSFET Transistor
Product Features and Performance
Trench MOSFET technology
Low on-resistance (Rds(on))
Fast switching speed
High current capability
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Efficient power conversion and control
Compact surface-mount package
Robust and reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 8V
Gate-to-Source Voltage (Vgs): ±8V
On-resistance (Rds(on)): 280mΩ @ 1A, 4.5V
Continuous Drain Current (Id): 860mA @ 25°C
Power Dissipation (Max): 290mW @ 25°C
Gate Charge (Qg): 4nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Surface mount package (SC-70, SOT-323)
Suitable for various electronic circuits and applications
Application Areas
Power management circuits
Switching regulators
Motor control
Battery-powered devices
General purpose amplification and switching
Product Lifecycle
Current production model
No known discontinuation plans
Availability of replacement or upgrade models
Key Reasons to Choose This Product
Excellent power handling and efficiency
Compact and space-saving design
Wide operating temperature range
Robust and reliable performance
RoHS3 compliance for environmental responsibility
SI1305DL-T1Electro-Films (EFI) / Vishay