IRLZ14PBF - Vishay Siliconix

Manufacturer Part Number

IRLZ14PBF

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

RoHS3 Compliant

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

N-Channel

TO-220-3 Package

Drain to Source Voltage (Vdss): 60 V

Maximum Gate-Source Voltage (Vgs): ±10 V

Drain-Source On-Resistance (Rds(on)): 200 mΩ @ 6 A, 5 V

Continuous Drain Current (Id): 10 A @ 25°C (Tc)

Input Capacitance (Ciss): 400 pF @ 25 V

Power Dissipation (Tc): 43 W

Threshold Voltage (Vgs(th)): 2 V @ 250 A

Drive Voltage: 4 V (Max Rds(on)), 5 V (Min Rds(on))

Gate Charge (Qg): 8.4 nC @ 5 V

Product Advantages

Suitable for high-power switching applications

Low on-resistance for efficient power conversion

Wide operating temperature range (-55°C to 175°C)

Through-hole mounting for secure installation

Key Technical Parameters

Manufacturer Part Number: IRLZ14PBF

Manufacturer: Vishay / Siliconix

Package: TO-220-3

Drain to Source Voltage (Vdss): 60 V

Continuous Drain Current (Id): 10 A

Drain-Source On-Resistance (Rds(on)): 200 mΩ

Power Dissipation (Tc): 43 W

Quality and Safety Features

RoHS3 Compliant

Wide operating temperature range (-55°C to 175°C)

Compatibility

Suitable for a variety of high-power switching applications

Application Areas

Power supplies

Motor control

Lighting control

Industrial automation

Automotive electronics

Product Lifecycle

Actively available product

No information on upcoming discontinuation or replacement

Several Key Reasons to Choose This Product

Excellent power handling capabilities with low on-resistance

Reliable performance over a wide temperature range

Secure through-hole mounting for industrial applications

RoHS3 compliance for use in modern electronic systems

Proven reliability and performance from a reputable manufacturer