Manufacturer Part Number
IRFUC20PBF
Manufacturer
Vishay / Siliconix
Introduction
Discrete semiconductor product
N-channel MOSFET transistor
Product Features and Performance
600V drain-source voltage
4Ω maximum on-resistance at 1.2A, 10V
2A continuous drain current at 25°C
350pF maximum input capacitance at 25V
5W maximum power dissipation at 25°C
18nC maximum gate charge at 10V
Product Advantages
High voltage capability
Low on-resistance
High current handling
Suitable for high power applications
Key Technical Parameters
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Voltage rating: 600V drain-source
Maximum gate-source voltage: ±20V
Threshold voltage: 4V at 250μA
Quality and Safety Features
TO-251AA package
Through-hole mounting
Compatibility
Compatible with various high-power, high-voltage applications
Application Areas
Switch mode power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available if discontinued
Key Reasons to Choose This Product
High voltage capability
Low on-resistance for efficient power switching
High current handling for high-power applications
Suitable for a wide range of industrial and automotive electronics