Manufacturer Part Number
IRFU9120PBF
Manufacturer
Vishay / Siliconix
Introduction
This product is a P-Channel MOSFET transistor from Vishay/Siliconix, suitable for a variety of power switching and control applications.
Product Features and Performance
High voltage MOSFET with a drain-source voltage rating of 100V
Low on-resistance of 600mΩ at 3.4A, 10V
High current capability of 5.6A continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 390pF at 25V
Supports a maximum gate-source voltage of ±20V
Product Advantages
Excellent power handling and efficiency due to low on-resistance
Versatile operating temperature range for use in diverse applications
Compact TO-251AA package with short leads for efficient heat dissipation
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 600mΩ @ 3.4A, 10V
Continuous Drain Current (Id): 5.6A @ 25°C
Input Capacitance (Ciss): 390pF @ 25V
Power Dissipation: 2.5W (Ta), 42W (Tc)
Quality and Safety Features
RoHS3 compliant
Tube packaging for protection and ease of handling
Compatibility
Compatible with standard MOSFET driver circuits and control systems
Application Areas
Power supplies
Motor controls
Switching regulators
Amplifiers
Industrial electronics
Product Lifecycle
This is an active and available product from Vishay/Siliconix.
No plans for discontinuation at this time.
Replacement or upgrade models may become available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent power handling capability due to low on-resistance
Wide operating temperature range for use in diverse environments
Compact and efficient TO-251AA package design
RoHS3 compliance for environmental responsibility
Proven reliability and performance from a trusted manufacturer