Manufacturer Part Number
IRFU210PBF
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
200V Drain-Source Voltage
±20V Gate-Source Voltage
5Ω On-Resistance
6A Continuous Drain Current
140pF Input Capacitance
5W Power Dissipation (Ta), 25W (Tc)
-55°C to 150°C Operating Temperature
Product Advantages
RoHS3 Compliant
TO-251AA Package
Through Hole Mounting
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs Max): ±20V
On-Resistance (Rds(on) Max): 1.5Ω @ 1.6A, 10V
Drain Current (Id Continuous @ 25°C): 2.6A (Tc)
Input Capacitance (Ciss Max): 140pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Suitable for use in various power switching and control applications
Product Lifecycle
Currently available, no known discontinuation plans
Key Reasons to Choose This Product
High voltage rating (200V)
Low on-resistance (1.5Ω)
High continuous drain current (2.6A)
Wide operating temperature range (-55°C to 150°C)
RoHS3 compliant
Through-hole mounting for easy integration